by Robert Draper .
Written in English
|Statement||English translation edited by Harold Silman, with additions by Charles R. Draper.|
|The Physical Object|
|Number of Pages||267|
This book contains a comprehensive review of CMP (Chemical-Mechanical Planarization) technology, one of the most exciting areas in the field of semiconductor technology. It contains detailed discussions of all aspects of the technology, for both dielectrics and metals/5(3). Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect (Springer Theses) - Kindle edition by Cheng, Jie. Download it once and read it on your Kindle device, PC, phones or tablets. Use features like bookmarks, note taking and highlighting while reading Research on Chemical Mechanical Polishing Mechanism of Novel Price: $ Cecil A. Coutinho, Vinay K. Gupta, in Applied Plastics Engineering Handbook, Chemical mechanical polishing/planarization (CMP) is a critical step in semiconductor manufacturing. The transformation in electronic devices that has occurred in the past few decades has relied greatly on the efficiency and effectiveness of planarization using slurry polishing. Different polishing damages, such as degradation of etching contrast and scratch traces, are reviewed. The article explains the final-polishing processes such as skid polishing, vibratory polishing methods, etch-attack and electromechanical polishing, and .
Polishing and buffing are finishing processes for smoothing a workpiece's surface using an abrasive and a work wheel or a leather cally polishing refers to processes that use an abrasive that is glued to the work wheel, while buffing uses a loose abrasive applied to the work wheel. Polishing is a more aggressive process while buffing is less harsh, which leads to a . Hong Xiao, Ph. D. 3 Overview • Multi layer metal interconnection • Planarization of dielectric layersFile Size: KB. Chemical mechanical polishing (CMP) generally refers to the polishing of surfaces that have been chemically modified, then abraded by particles in a slurry. The slurry is entrained, between the target surface to be polished and a “pad,” and the relative movement of . Chemical mechanical polishing or planarization is a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing. 2 Working principles. Physical action. Chemical action. 3 Usage in semiconductor fabrication. 8 External links.
This book provides comprehensive and authoritative coverage of mechanical polishing methods to ensure the quality and usefulness of micrographs. The 4th Edition covers the advances that have been made since the 3rd Edition was published in Chemical Mechanical Planarization (CMP) has emerged in the last two decades and grown rapidly as a basic technology widely used in semiconduc tor device fabrication. As a semiconductor processing step, it was developed at IBM in the mid s. From this beginning the technology has been widely adopted throughout the semiconductor industry. As basic . Study on mechanical polishing for CVD diamond films of forming nucleus surface and growing surface. Key Engineering Materials, –, – Google Scholar. Chemical-mechanical planarization (CMP) has emerged over the past few years as a key enabling technology in the relentless drive of the semiconductor industry towards smaller, faster and less expensive interconnects. However, there are still many gaps in the fundamental understanding of the overall CMP process and the associated defect and .